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Self-aligned quadruple patterning (SAQP) is already the established process to be used for patterning fins for 7 nm and 5 nm FinFETs. With SAQP, each patterning step gives a critical dimension uniformity (CDU) value in the sub-nanometer range (3 sigma).
Oct 12, 2018 · In this Article, we report a side-by-side electrical validation of the DSA patterning method by fabricating FinFET devices made of either DSA fins or SAQP fins at full ‘research 7 nm’ ground...
- Chi-Chun Liu, Elliott Franke, Yann Mignot, Ruilong Xie, Chun Wing Yeung, Jingyun Zhang, Cheng Chi, C...
- 2018
Nov 5, 2022 · The 7nm process features SAQP for the FEOL, and double patterning for the BEOL. GlobalFoundries claims a 2.8 times density improvement compared to their 14nm process, and a performance improvement of 40% or a 55% reduction in power consumption.
Mar 11, 2016 · SAQP Specs for 7nm finFETs. As discussed in my last Ed’s Threads, lithography has become patterning as evidenced by first use of Self-Aligned Quadruple Patterning (SAQP) in High Volume Manufacturing (HVM) of memory chips.
- Edkor
People also ask
How does SAQP work?
What is self-aligned quadruple patterning (SAQP)?
Can SASP process pattern 7-nm features?
Why is SADP/SAQP process control difficult?
Apr 14, 2023 · The 7nm process features SAQP for the FEOL, and double patterning for the BEOL. GlobalFoundries claims a 2.8 times density improvement compared to their 14nm process, and a performance improvement of 40% or a 55% reduction in power consumption.
Oct 1, 2012 · SAQP process is more suitable for 1-D memory patterning because of its scaling capability, but most likely it is the (more aggressive) SASP process that will reach the maximum cycles of frequency multiplication to hit 6–7 nm target.
Jul 1, 2016 · Our predictive 7-nm PDK, referred to as the ASAP7 PDK for the remainder of the paper, allows design exploration at the 7-nm node, accurately estimating circuit performance, area, and power for a design at that node.
