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4 days ago · MOS memory, based on MOS transistors, was developed in the late 1960s, and was the basis for all early commercial semiconductor memory. The first commercial DRAM IC chip, the 1K Intel 1103, was introduced in October 1970. Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.
May 16, 2024 · DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a cell consisting of a capacitor and a transistor. In DRAM, data is stored as electric charge within the capacitors, which must be regularly refreshed to maintain the information, as the charge leaks over time.
1 day ago · China's CXMT has released G3 DDR3L and LPDDR4X DRAM chips and is developing G4 and G5 generations for DDR5 applications. Early next year will see the release of D1c mass-produced DRAM by major players, followed by the final 10nm-class DRAM devices (D1d or D1δ nodes) by 2026 or 2027. By 2030, DRAM technology is expected to scale down to single ...
3 days ago · Rambus DRAM (RDRAM) RDRAM is a memory developed by Rambus Inc. It comprises RAM, a RAM controller, and a bus. It was widely used for graphics cards in the late 1990s and early 2000s. Cache DRAM This DRAM memory comes with an on-chip cache memory similar to SDRAM, which serves as the high-speed data buffer for the main (DRAM) memory.
May 8, 2024 · DRAM is widely used in digital electronics where low-cost and high-capacity memory is required. One of the largest applications for DRAM is the main memory (called the “RAM”) in modern computers and graphics cards (where the “main memory” is called the graphics memory ). It is also used in many portable devices and video game consoles.
May 7, 2024 · The prolific inventor and IBM researcher, affectionately known as "Bob" to colleagues, passed away on April 23 at the age of 91. Dennard's claims to fame are enormous. He's the mind behind dynamic ...
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May 28, 2024 · Recently, DRAM cell scaling has slowed due to multiple challenges, including process integration, leakage, and sensing margin. Innovative technologies such as higher-k capacitor dielectric materials, pillar capacitors, recess channel transistors, and high-k metal gate (HKMG) peripheral transistors can be seen in the most advanced DRAM products.
