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Seungyeol Oh | IEEE Xplore Author Details. Affiliation. Mechatronics Research, Samsung Electronics Co., Ltd, Hwaseong-si, Korea. Publication Topics.
Sep 17, 2020 · Herein, the effect of defects, controlled by ozone dosage, on the field cycling behavior of the atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO) films is investigated. A nearly wake-up free device is achieved after reduction of carbon contamination and oxygen defects by increasing the ozone dosage.
- Alireza Kashir, Seungyeol Oh, Hyunsang Hwang
- 2021
Also published under: Sangho Oh, Sang Ho Oh Affiliation Department of Material Science and Engineering, Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
Dec 23, 2020 · In this study, we investigate the effects of various electrodes on the ferroelectric properties of ultrathin HfZrO x (HZO) films. The ferroelectric polarization is totally suppressed in the HZO films with TiN and W bottom electrodes when the film thickness is below 5 nm.
Seung-Yeol Oh was born in Haenam-gun, Korea, in 1975. He received the M.S. degree in electrical engineering from Chonnam National University, Gwang-ju, Korea, in 2004, where he is currently working toward the Ph.D. degree in electrical engineering. He is also a Senior Researcher in Korea Electronics Technology Institute, Gwang-ju.
ORCID record for Seungyeol Oh. ORCID provides an identifier for individuals to use with their name as they engage in research, scholarship, and innovation activities.
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Apr 26, 2017 · Seungyeol Oh, Taeho Kim, +5 authors. H. Hwang. Published in IEEE Electron Device Letters 26 April 2017. Computer Science, Engineering, Materials Science. TLDR. Using synapse parameters of the HzO-based ferroelectric device and a neural network simulator, it is confirmed that the pattern recognition accuracy of the MNIST data set is 84%. Expand.
