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Tantalum nitride (TaN) is a chemical compound, a nitride of tantalum. There are multiple phases of compounds, stoichimetrically from Ta 2 N to Ta 3 N 5, including TaN. As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the back end of line of computer chips. Tantalum nitrides are also used in ...
A series of Tantalum Nitride (TaN) films under a reactive direct current magnetron sputtering method with a controlled total gas flow rate were prepared on aluminum oxide substrates.
Feb 12, 2004 · The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were investigated in detail by using transmission electro.
Oct 1, 2005 · The electrical resistivity and mechanical hardness of reactively sputtered tantalum nitride (TaN) thin films on ceramic substrates have been investigated. Depending on the nitrogen/argon gas flow rate ratio (defined as R ), the resistivity of the tantalum nitride films varied unusually widely (10 7 orders) from metal to insulator.
- Deok Kee Kim, Heon Lee, Donghwan Kim, Young Keun Kim
- 2005
Aug 6, 2022 · Wang et al. employed a DC reactive magnetron co-sputtering system to prepare the TaN-Cu nanocomposite thin films and studied the resistivity and temperature coefficient of resistance (TCR) of the samples.
Jun 7, 2022 · TaN thin films were grown on silicon substrates at a constant temperature. The resulting films were analyzed by atomic force microscopy (AFM), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and resistance vs. temperature (R-T) techniques.
Mar 1, 2024 · Reactively sputtered tantalum nitride (TaN) thin films are used extensively in high-precision chip resistors because of their near-zero temperature coefficients of resistance (TCR). Passivation is usually necessary to ensure the long-term stability of the films.
