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1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications. Mosys uses a single-transistor storage cell (bit cell) like dynamic random-access memory (DRAM), but surrounds ...
An embedded variant of PSRAM was sold by MoSys under the name 1T-SRAM. It is a set of small DRAM banks with an SRAM cache in front to make it behave much like a true SRAM. It is used in Nintendo GameCube and Wii video game consoles.
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What is 1T SRAM?
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1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory):
Thyristor RAM (T-RAM) is a type of random-access memory dating from 2009 invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.
1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications. Mosys uses a single-transistor storage cell (bit cell) like dynam
Jan 24, 2019 · Sticking With their Story: Zeno Demonstrates 1T SRAM at Leading Nodes – EEJournal. Let’s face it: We’re addicted to SRAM. It’s big, it’s power-hungry, but it’s fast. And no matter how much we complain about it, we still use it. Because we don’t have anything better in the mainstream yet. We’ve looked at attempts to improve conventional SRAM.
