In April 2016, TSMC announced that 7 nm trial production would begin in the first half of 2017. In April 2017, TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm (N7FF+) process,  with extreme ultraviolet lithography (EUV). 
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GlobalFoundries has skipped 10 nm, Intel has not yet started high-volume 10 nm production, due to yield issues, and TSMC has considered 10 nm to be a short-lived node, mainly dedicated to processors for Apple during 2017–2018, moving on to 7 nm in 2018.