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14 nm 14LPP (14 nm) 12LP (12 nm) 14 nm Transistor density (MTr/mm 2) ? 32.94 (14 nm) 54.38 (11 nm) 28.88: 33.8: 37.5. 44.67. 30.59: 36.71: 30: Transistor gate pitch (nm) 70 78 – 14LPE (HD) 78 – 14LPP (HD) 84 – 14LPP (UHP) 84 – 14LPP (HP) 78 – 11LPP (UHD) 88 70 (14 nm) 70 (14 nm +) 84 (14 nm ++) 84 ?
Intel has developed a true 14 nm technology with industry-leading performance, power, density and cost per transistor. The 14 nm technology and the lead processor product are now qualified and in volume production. A full menu of SoC transistor and interconnect features are provided.
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Aug 11, 2014 · The tighter density goes hand-in-hand with 14nm’s feature size reductions, while the taller, thinner fins allow for increased drive current and increased performance. Meanwhile by reducing the ...
It's a (p)arameterized cell. So you enter in the dimensions of the transistor, capacitor, resistor, diode and the p-cell creates the layout, usually with contacts & some metallization included. A basic issue with shrinking feature sizes is that 14nm < wavelength of the light used to expose the resist.
Jul 1, 2005 · The average length of the wires (±SD) is 4.5 ± 0.25 μm, and each wire exhibits two notches measuring 210 ± 10 nm, two measuring 140 ± 8 nm, and two measuring 70 ± 5 nm . The diameter of each wire is 360 ± 20 nm.
- Lidong Qin, Sungho Park, Ling Huang, Chad A. Mirkin
- 2005
The 14 nm transistor fins are taller, thinner and more closely spaced for improved density and performance. These improved transistors also require fewer fins, which further improves the overall process density. The transistor gate pitch shrinks from 90 nm to 70 nm and the minimum interconnect pitch shrinks from 80 nm to 52 nm, enabling a logic ...
Key points in 14 nm photolithographic process development, challenges and process window capability Abstract: After 20 nm, the 14 nm process has become a major technology node that may stay in market for some extended period of time.
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