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  1. Nanoelectronics. v. t. e. The "14 nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" (or "20 nm") node. The "14 nm" was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following "22 nm" was expected to be "16 nm".

  2. May 25, 2023 · 2 nm. 14 nm. · · e. The 14 nanometer (14 nm) lithography process is a semiconductor manufacturing process node serving as shrink from the 22 nm process. The term "14 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. The 14 nm node was introduced in 2014/2015 and has ...

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    Gjithmonë para! - Wikipedia shqip kalon 95 000 artikuj! Sa bukur dukesh! - Faqet më të rëndësishme të Wikipedia-s shqip vijnë me një pamje të re e veprimtari të shtuar. Shiko faqen kryesore e Kuvendin. Gëzuar! - Wikipedia shqip mbush 20 vjeç! Statistika. Wikipedia mbikëqyret nga Fondacioni Wikimedia, një fondacion jofitimprurës i ...

  5. Wikipedia Shqip është versioni shqip i Wikipedia-s, enciklopedisë së lirë. Ajo filloi më 12 tetor 2003 dhe tani përmban 84.261 artikuj . Për nga numri i artikujve, Wikipedia shqip e mban vendin e 75-të [1] sipas listës së Wikipedia-ve.

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  6. 10x. Intel Core M processor. >. Server Laptop Mobile. ~1.6x per gen. 2nd generation Tri-gate transistors with improved low voltage performance and lower leakage. Better than normal area scaling. Extensive design-process co-optimization. Microarchitecture optimizations for active power reduction.

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  7. 45 nm, low-power, in-order microarchitecture for use in Atom processors. Saltwell: 32 nm shrink of the Bonnell microarchitecture. Silvermont. 22 nm, out-of-order microarchitecture for use in Atom processors, released on May 6, 2013. Airmont: 14 nm shrink of the Silvermont microarchitecture. Goldmont.

  8. The 14 nm transistor fins are taller, thinner and more closely spaced for improved density and performance. These improved transistors also require fewer fins, which further improves the overall process density. The transistor gate pitch shrinks from 90 nm to 70 nm and the minimum interconnect pitch shrinks from 80 nm to 52 nm, enabling a logic ...

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